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HAT2033R/HAT2033RJ
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-664B (Z) 3rd. Edition February 1999 Features
* * * * For Automotive Application ( at Type Code "J ") Low on-resistance Capable of 4 V gate drive High density mounting
Outline
SOP-8
8 5 76
56 7 8 DD D D
3 12
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
HAT2033R/HAT2033RJ
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2033R HAT2033RJ Avalanche energy HAT2033R HAT2033RJ Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg
Note2
Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note4 Note1
Ratings 60 20 7 56 7 -- 7
Unit V V A A A -- A -- mJ W C C
EAR
Note4
-- 4.2 2.5 150 - 55 to + 150
1. PW 10s, duty cycle 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. Value at Tch=25C, Rg50
2
HAT2033R/HAT2033RJ
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT2033R Symbol Min V(BR)DSS V(BR)GSS I GSS I DSS 60 20 -- -- -- -- -- 1.2 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 0.03 0.04 10 740 370 130 13 55 140 95 0.82 45 Max -- -- 10 1 0.1 -- 10 2.2 0.038 0.053 -- -- -- -- -- -- -- -- 1.07 -- Unit V V A A A A A V S pF pF pF ns ns ns ns V ns IF = 7 A, VGS = 0 Note4 IF = 7 A , VGS = 0 diF/ dt = 50 A/s VDS =4 8V , VGS = 0 Ta = 125C VDS = 10 V, I D = 1 mA I D = 4 A, VGS = 10 V Note4 I D = 4 A, VGS = 4 V Note4 I D = 4 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1MHz VGS =10 V, ID = 4 A VDD 30 V Test Conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0
HAT2033RJ I DSS HAT2033R I DSS
HAT2033RJ I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test
3
HAT2033R/HAT2033RJ
Main Characteristics
Maximum Safe Operation Area 100
I D (A)
4.0
Pch (W)
Power vs. Temperature Derating Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s
10 s
100 s
1m
10 ms
30 10 3 1 0.3
DC Op
PW =
3.0
s
sh
Drain Current
Channel Dissipation
er
2.0
ati
(1
on
1.0
0
50
100
150 Ta (C)
200
Ambient Temperature
WN Operation in < ote 10 6 this area is s) 0.1 limited by R DS(on) Ta = 25C 0.03 1 shot Pulse 1 Drive Operation 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V)
(P
ot)
Note 6 : When using the glass epoxy board (FR4 40x40x1.6 mm)
Typical Output Characteristics 50 10 V
I D (A)
Typical Transfer Characteristics 20 V DS = 10 V Pulse Test 16
6V
Pulse Test 4.5 V
(A)
40
30
4.0 V
ID Drain Current
12
Drain Current
20
3.5 V 3.0 V VGS = 2.5 V
8 25C 4 Tc = 75C -25C 0 1 2 3 4 V GS (V) 5
10
0
2 4 6 Drain to Source Voltage
8 10 V DS (V)
Gate to Source Voltage
4
HAT2033R/HAT2033RJ
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance R DS(on) ( )
0.5
0.5
Drain to Source Saturation Voltage V DS(on) (V)
Pulse Test
Pulse Test
0.2
0.4
0.3
0.1
VGS = 4 V
0.05
0.2
ID=5A 2A 1A
0.1
0.02 0.01
10 V
0
12 4 8 Gate to Source Voltage
16 20 V GS (V)
0.1 0.2
0.5 1 2 5 10 20 Drain Current I D (A)
50
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 1, 2 A 0.06 V GS = 4 V 0.04 1, 2, 5 A 10 V 5A
Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 75 C Tc = -25 C 25 C
0.02 0 -40
0 40 80 120 160 Case Temperature Tc (C)
5
HAT2033R/HAT2033RJ
Body-Drain Diode Reverse Recovery Time di / dt = 50 A / s V GS = 0, Ta = 25 C Typical Capacitance vs. Drain to Source Voltage 5000
1000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500
2000 Ciss
1000 500 200 100 50 20 10 VGS = 0 f = 1 MHz 0
200 100 50
Coss Crss
20 10 0.1
0.3 1 3 10 30 100 Reverse Drain Current I DR (A)
10 20 30 40 50 Drain to Source Voltage V DS (V)
Dynamic Input Characteristics 100
Switching Characteristics 20 1000
V DS (V)
V GS (V)
ID=7A
Switching Time t (ns)
80 V DD = 50 V 25 V 10 V V DS V GS
16
300 100 tf 30 10 3 1 0.1 tr
t d(off)
Drain to Source Voltage
60
12
Gate to Source Voltage
40
8
t d(on)
20
V DD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc)
4 0 40
V GS = 10 V, V DD = 3 0 V PW = 5 s, duty < 1 % 0.3 1 3 10 30 Drain Current I D (A) 100
0
6
HAT2033R/HAT2033RJ
Reverse Drain Current vs. Souece to Drain Voltage 20
Reverse Drain Current I DR (A) Repetive Avalanche Energy E AR (mJ)
Maximun Avalanche Energy vs. Channel Temperature Derating 5 I AP = 7 A V DD = 25 V L = 100 H duty < 0.1 % Rg > 50
16 12 10 V
4
5V V GS = 0, -5 V
3
8
2
4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V)
1 0 25
50 75 100 125 150 Channel Temperature Tch (C)
Avalanche Waveform Avalanche Test Circuit L I AP Monitor I AP Rg Vin 15 V D. U. T VDD ID 50 0 VDD V DS EAR = 1 2 * L * I AP * 2 VDSS VDSS - V DD
V DS Monitor
V (BR)DSS
7
HAT2033R/HAT2033RJ
Normalized Transient Thermal Impedance vs. Pulse Width 10
Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.1
0.2
0.1
0.05
0.01
0.02 0.01
lse
ch - f(t) = s (t) * ch - f ch - f = 83.3 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm)
pu
PDM PW T
0.001
1s
t ho
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout Vout Monitor
Switching Time Waveform
90% 10% 10% 90% td(on) tr 90% td(off) tf 10%
8
HAT2033R/HAT2033RJ
Package Dimensions
Unit: mm
5.0 Max 8 5
1
4
4.0 Max
1.75 Max
6.2 Max 0.25 Max
0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max
0.15 0.25 M Hitachi code EIAJ JEDEC FP-8DA -- MS-012AA
9
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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